Custom Epitaxial Wafers

A variety of epi products having features uncommon in standard CMOS or power discrete epi products are demanded for special purpose. These are categorized as "custom epi" and are made to order either in-house or through qualified outsourcing partners that are specialized in silicon epitaxial growth.

Custom EPI Product Examples
 

Product Diameter Features
Intrinsic or pseudo-intrinsic layer epi 150mm
200mm
N(i)/P+ Intrinsic(or psuedo-intrinsic) resistivity > 200 ohm-cm with no upper limit
N(i)/N++ Intrinsic(or psuedo-intrinsic) resistivity >> 50 ohm-cm with no upper limit
P(i)/P+ Intrinsic(or psuedo-intrinsic) resistivity >> 30 ohm-cm with no upper limit
Graded doping epi 150mm
200mm
Tailored doping profile
Ultra thick single layer epi 150mm
200mm
>70 um
Ultra thick multiple layer epi 150mm
200mm
>70 um total cumulative
Heavily doped layer epi 150mm
200mm
300mm
P+(<0.02 ohm-cm)/P+
P+/N++
N+/P++
As-doped layer epi 150mm N/P++
As doped to <0.05 ohm-cm
Epi on ultra high resistivity substrate 150mm
200mm
P/UHR Cz (Substrate > 1000 ohm-cm)
P/Fz (Substrate > 1000 ohm-cm)