Standard CMOS Epi

The trend to produce smaller and smaller device features began in 1958 with the invention of the first integrated circuit in order to incorporate more complex functionality. Smaller device features also improve performance and reduce power consumption and heat production in the circuit.  A critical aspect in the construction of any integrated circuit is the electrical isolation of the circuit elements from each other. Without sufficient isolation, the elements could communicate electrically with each other in unintended ways, ruining device performance. Smaller device features reduce the distance between circuit elements, exacerbating isolation problems, as well as increasing sensitivity of the devices to minute surface imperfections in the wafer.

Our epitaxial wafers meet the technological demands of our customers that manufacture advanced semiconductor devices. Epitaxial wafers consist of a thin, single crystal silicon layer grown on the polished surface of a silicon wafer substrate. This "epi" layer is designed to have different compositional and electrical properties from the underlying wafer, tailored to the specific demands of the device. This compositional change, among other things, can be used to improve isolation between circuit elements fabricated on the epi wafer. The epi layer is also substantially free of surface imperfections that can cause device failure. Epitaxial wafers provide for increased reliability of the finished semiconductor device, greater efficiencies during the semiconductor manufacturing process, and ultimately more complex integrated circuit devices.

Crystal Product Portfolio

 

Sub Dopant Resistivity Target Diameter
Arsenic 0.002-0.05 150mm
Boron 0.002-100 150mm, 200mm, 300mm
Phos 0.001-60 150mm, 200mm, 300mm
Antimony 0.005-0.051 150mm, 200mm, 300mm

 

Epi Portfolio

 

Epi Dopant Substrate Dopant Epi Resistivity Target Diameter
Phos Arsenic 1-20 150mm, 200mm
Phos Antimony 0.8-60 150mm, 200mm
Phos Boron 1-60 150mm, 200mm
Arsenic Arsenic 1-20 150mm
Arsenic Antimony 0.8-60 150mm, 200mm
Arsenic Boron 1-60 150mm, 200mm
Arsenic Phos 1-20 150mm, 200mm
Boron Antimony 1-60 150mm, 200mm
Boron Boron 0.8-60 150mm, 200mm, 300mm
Phos Phos 0.3-20 150mm, 200mm, 300mm